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首页> 外文期刊>Applied Physics Letters >Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths
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Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths

机译:根据自组装单层链长克服有机场效应晶体管的迁移率和偏置稳定性之间的折衷

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摘要

This study examined the relationship between the mobility and bias stability of pentacene-based organic field-effect transistors (OFETs) regarding a self-assembled monolayer (SAM) treatment. For this systematic study, four types of silazane-based SAMs with different alkyl chain lengths in the range of 1–8 were used. Silazane-based SAMs have an advantage of processability due to the mild reaction conditions. The mobility was increased from 0.29 without SAM to 0.46, 0.61, 0.65, and 0.84 cm2/V s after the SAM-treatment with an alkyl chain length of 1, 3, 4, and 8, respectively. On the other hand, inverse proportional relationship was observed between the bias stability and SAM alkyl chain length. Under high gate bias stress (equivalent to electric field of 3 MV/cm) for 2 h, the threshold voltage shift of the OFET was decreased from 12.19 V without SAM to 5.69 V with a short SAM-treatment (alkyl chain length of 1) and 7.14 V with a long SAM-treatment (alkyl chain length of 8). This is the significant finding that there was a tradeoff relationship between the mobility and bias stability of OFETs concerning the SAM alkyl chain length. To overcome this tradeoff, a method for surface engineering using two-step SAM-treatment was introduced. By treating long SAM and short SAM in sequence, both the high mobility and good bias stability were achieved. With two-step SAM-treatment, the OFET showed high mobility as a long SAM-treated OFET and good bias stability as a short SAM-treated OFET.
机译:这项研究检查了关于自组装单层(SAM)处理的并五苯有机场效应晶体管(OFET)的迁移率和偏压稳定性之间的关系。在本系统研究中,使用了四种类型的基于硅氮烷的SAM,它们的烷基链长度在1-8之间。基于硅氮烷的SAM由于反应条件温和而具有可加工性的优势。 SAM处理后烷基的链长分别为1、3、4和8,迁移率从无SAM的0.29增加到0.46、0.61、0.65和0.84 cm 2 / V s 。另一方面,在偏压稳定性和SAM烷基链长度之间观察到反比例关系。在高栅极偏置应力(等于3 MV / cm的电场)下持续2 h,OFET的阈值电压漂移从无SAM的12.19 V降低到短SAM处理(烷基链长为1)的5.69 V长时间SAM处理(烷基链长为8)时为7.14V。这是一个重要的发现,即关于SAM烷基链长,OFET的迁移率和偏压稳定性之间存在折衷关系。为了克服这种折衷,引入了一种使用两步SAM处理的表面工程方法。通过依次处理长SAM和短SAM,可以实现高迁移率和良好的偏压稳定性。通过两步SAM处理,OFET与长SAM处理的OFET相比具有高迁移率,而与短SAM处理的OFET则显示出良好的偏压稳定性。

著录项

  • 来源
    《Applied Physics Letters》 |2014年第17期|1-5|共5页
  • 作者单位

    Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea|c|;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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