Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation

摘要

Ferroelectric tunnel memristor (FTM) was recently discovered. Its resistance can be continuously tuned by controlling the growth of domain in ferroelectric tunnel barrier. Experiments show its large OFF/ON resistance ratio (>102) and high operation speed (∼10 ns), providing great potential to build up multi-level storage and neuromorphic circuits. However, the corresponding electrical model for circuit simulation is still lacking. In this Letter, we developed a compact model for a voltage-controlled ferroelectric tunnel memristor based on experimental results and ferroelectric switching dynamics. The memristive behavior of this model was demonstrated by resistance measurements as a function of the amplitude and duration of programming voltage pulses, and the accuracy was validated by the relative good agreement between simulation results and experimental measurement. Our model was used to simulate a FTM-based spike-timing dependent plasticity circuit to show its use in neuromorphic circuits.