Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf_(0.5)Zr_(0.5)O_2 heterostructure

摘要

The magneto-electric coupling (MEC) effect has been considered an effective method for the voltages controlled magnetic anisotropy in tra-ditional ferroelectric/ferromagnetic structures. Unlike traditional perovskite ferroelectrics, the ferroelectric hafnium-based oxides hold great potential for use in the complementary metal oxide semiconductors (CMOS) circuit with the advantages of CMOS compatibility and easy scaled-down and lower leakage current. In this article, the MEC effects in the PtCoRu/Hf_(0.5)Zr_(0.5)O_2 (HZO) heterostructure have been investi-gated using the polar magneto-optical Kerr effect microscopy and anomalous Hall effect. The major modification of perpendicular magnetic anisotropy of the PtCoRu thin film was controlled obviously within the ±4 V polarized voltages of the Hf_(0.5)Zr_(0.5)O_2 (HZO) film, accompany-ing with the coercivity field and remnant magnetization significantly decreased. The Hall voltages of PtCoRu in Hall bar devices were also controlled effectively under ±3V polarized voltages. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in future.