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Air-stable and low threshold amplified spontaneous emission via CsBr aqueous solution processed all-inorganic CsPbBr_3 perovskite films

机译:通过CSBR水溶液加工全无机CSPBBR_3钙钛矿薄膜的空气稳定和低阈值扩增的自发发射

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摘要

Inorganic cesium lead halide perovskite (CsPbX_3, X = Cl, Br, and I) has attracted increasing attention in the field of laser application due to its excellent stability compared to the organic-inorganic hybrid perovskite since affording the radiation of a long pulse pump source requires high thermal stability of the material. However, it is difficult to observe the amplified spontaneous emission (ASE) of CsPbBr_3 using a one-step solution method due to the low solubility of CsBr in the organic solvent. Herein, we fabricate a CsPbBr_3 film with a two-step solution method and realize the ASE under the long pulse pumping. Meanwhile, a CsBr aqueous solution is used as an effective additive to increase the concentration of Cs~+ in the precursor solution and then to improve the optical amplification properties of the CsPbBr_3 films. The films exhibit better crystalline and enhanced photoluminescence intensity. Both the ASE threshold and gain have been significantly improved. Furthermore, the optimized film shows a satisfying stability of ASE after being placed in the air for more than two months.
机译:无机铯铅卤化物钙钛矿(CSPBX_3,X = CL,BR和i)由于其与有机 - 无机杂交钙钛矿相比,激光应用领域的越来越受到了激光应用领域的关注,这是由于具有长脉冲泵源的辐射的辐射。需要高热稳定性的材料。然而,由于CSBR在有机溶剂中的溶解度低,因此难以使用一步溶液方法观察CSPBBR_3的扩增自发发射(ASE)。在此,我们用两步解方法制造CSPBBR_3膜,并在长脉冲泵浦下实现ASE。同时,CSBR水溶液用作有效的添加剂,以增加前体溶液中的Cs〜+的浓度,然后改善CSPBBR_3薄膜的光学放大性能。薄膜表现出更好的结晶和增强的光致发光强度。 ASE阈值和增益都得到了显着改善。此外,优化的薄膜在放置在空气中超过两个月后,显示ASE的满足稳定性。

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  • 来源
    《Applied Physics Letters》 |2021年第25期|251106.1-251106.6|共6页
  • 作者单位

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    College of Engineering Information Technology and Environment Charles Darwin University Darwin Northern Territory 0909 Australia;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

    Key Laboratory of Flexible Electronics (KLOFE) Institute of Advanced Materials (IAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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