Indium segregation in AlInN/AlN/GaN heterostructures

摘要

AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects andnchannels were observed. In phase-contrast mode, these features were found related toninhomogeneities associated with In-segregation u0002and/or In-diffusionu0003 and Al-rich surfacenreconstruction. The electrical characterization via conductive atomic force microscopy showednenhanced conductivity regions related to In-rich traces within channels and V-defects.