Domain wall assisted magnetization switching in „111… oriented L10 FePt

摘要

We report on growth and magnetic properties of exchange-coupled u0002111u0003-L10 FePt hard/CoFeTaBnsoft magnetic metallic glass bilayered structure processed at lower temperature u0002u0004400 °Cu0003. Singlenphaselike hysteresis loops with tailorable coercivity u0002u00028.2 kOeu0003 in out of plane direction arenobtained. The magnetization switching mechanism is identified as domain wall assisted. In views ofnexcellent nanofabrication abilities of metallic glass thin film and the ability to grow preferrednoriented L10 FePt, the present bilayered structure is very promising for the fabrication of highndensity bit—patterned magnetic recording media and other spintronic devices. © 2010 AmericannInstitute of Physics. u0005doi:10.1063/1.3479054