High quality single-crystal germanium-on-insulator on bulk Si substrates

摘要

Germanium-on-insulator u0002GOIu0003 is desired for high performance metal-oxide-semiconductorntransistors and monolithically integrated optoelectronics. We demonstrate a promising approach tonachieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. Thendislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trenchnby selective area heteroepitaxy combined with hydrogen annealing. Low defect density ofn4u0002106ncm−2nand low surface roughness of 0.7 nm u0002root-mean-squareu0003 on GOI are confirmed bynplan-view transmission electron microscopy and atomic force microscopy analysis. In addition, thenexcellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirmnGe crystal quality. The selectively grown GOI structure can provide the monolithic integration ofnSiGe based devices on a Si very large scale integration u0002VLSIu0003 platform. © 2010 American Institutenof Physics.nu0004doi:10.1063/1.3478242