Polarization control of electroluminescence from vertically stacked

摘要

We have developed a technique to control the polarization dependence of quantum dotnu0002QDu0003-semiconductor optical amplifiers u0002SOAsu0003 using vertically stacked self-assembled InAs QDsnwith moderately thick intermediate layers. By increasing the number of stacking layers, thentransverse magnetic polarization component of electroluminescence u0002ELu0003 from the cleaved edgensurface of the SOA has been enhanced dramatically. Broadband and almost isotropic EL withna polarization difference of less than 1.2 dB has been demonstrated in a 1.3 u0002m opticalncommunication band for nine-layer stacked QDs in the active region of the SOA. © 2010 AmericannInstitute of Physics. u0004doi:10.1063/1.3441403