Single step, complementary doping of graphene

摘要

A single-step doping method capable of high resolution n- and p-type doping of large area graphenenis presented. Thin films of hydrogen silsesquoxane on exfoliated graphene are used to demonstratenboth electron and hole doping through control of the polymer cross-linking process. Thisndual-doping is attributed to the mismatch in bond strength of the Si–H and Si–O bonds in the filmnas well as out-gassing of hydrogen with increasing cross-linking. A high-resolution graphene p-nnjunction is demonstrated using this method.