Terahertz conductivity of doped silicon calculated using the ensemble Monte Carlo/finite-difference time-domain simulation technique

摘要

We present terahertz-frequency characterization of doped silicon via a multiphysics numericalntechnique that couples ensemble Monte Carlo u0001EMCu0002 simulation of carrier transport and anfinite-difference time-domain u0001FDTDu0002 solver of Maxwell’s curl equations. We elucidate thenimportance of rigorous enforcement of Gauss’s law, in order to avoid unphysical charge buildup andnenhance solver accuracy. The calculated complex conductivity of doped bulk silicon showsnexcellent agreement with available experimental data. This comprehensive microscopic simulator isna valuable predictive tool in the terahertz frequency range, where experimental data are scarce andnthe Drude model inadequate.