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Strain-mediated unusual bandgap bowing in continuous composition tuned monolayer Mo_(1-x)W_xS_2 ternary alloys

机译:应变介导的不寻常的带隙弯曲在连续组合物调谐单层MO_(1-x)W_xS_2三元合金中

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摘要

Band gap engineering via 2D alloying is a vital strategy for three-atom-thick transition metal dichalcogenides based optoelectronics, valleytronics and nanophotonics. Here we demonstrate the growth of Mo_(1-x)W_xS_2 ternary alloy monolayers and precise compositional tuning for the entire range of x from 0 to 1 using the gas-phase precursor approach. By means of Raman spectroscopy we show that W alloying in MoS_2 lattice can lead to a tensile strain of ~0.8%. The alloying-induced tensile strain plays a key role in observing redshift in optical absorption and photoluminescence (PL) bands and resulted an unusual bandgap bowing. The coupling of tensile strain and alloying effect allowed us to tune the overall PL emission energy to as large as 185 meV. Our optical spectroscopy results indicate three different phase-regions for the Mo_(1-x)W_xS_2 alloy system. For x< 0.37, the alloys exhibit MoS_2-like nature, whereas, WS_2-like behavior is observed for x > 0.64, and a mixed behavior for 0.37 ≤ x ≤ 0.64.
机译:带2D合金化的带隙工程是基于三个原子厚的过渡金属二甲基化物的光电子,谷谷和纳米级族学的重要策略。在这里,我们使用气相前体方法展示了Mo_(1-X)W_XS_2三元合金单层的生长和精确的组成调谐,从0到1的整个x的整个范围。通过拉曼光谱学,我们表明MOS_2晶格中的W合金化可以导致拉伸应变为0.8%。合金诱导的拉伸应变在观察光学吸收和光致发光(PL)带中的射频中起着关键作用,并导致不寻常的带隙弯曲。拉伸应变和合金化效果的耦合允许我们将整个PL发射能量调节到185米。我们的光学光谱结果表示MO_(1-X)W_XS_2合金系统的三个不同相位区域。对于X <0.37,合金表现出MOS_2样性质,而观察到X> 0.64的WS_2样行为,并且混合行为为0.37≤x≤0.64。

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  • 来源
    《Applied Physics Letters》 |2021年第1期|013102.1-013102.6|共6页
  • 作者单位

    2D Materials and Devices Laboratory (2DML) Sir C. V. Raman Research Park Department of Physics and Nanotechnology SRM Institute of Science and Technology (SRMIST) Kattankulathur 603203 Chennai India;

    2D Materials and Devices Laboratory (2DML) Sir C. V. Raman Research Park Department of Physics and Nanotechnology SRM Institute of Science and Technology (SRMIST) Kattankulathur 603203 Chennai India;

    2D Materials and Devices Laboratory (2DML) Sir C. V. Raman Research Park Department of Physics and Nanotechnology SRM Institute of Science and Technology (SRMIST) Kattankulathur 603203 Chennai India;

    2D Materials and Devices Laboratory (2DML) Sir C. V. Raman Research Park Department of Physics and Nanotechnology SRM Institute of Science and Technology (SRMIST) Kattankulathur 603203 Chennai India Nanotechnology Research Centre (NRC) SRM Institute of Science and Technology (SRMIST) Kattankulathur 603203 Chennai India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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