Nanoscale compositional analysis of wurtzite BAIN thin film using atom probe tomography

摘要

In this work, the local atomic level composition of BAIN films with ~20% B was investigated using atom probe tomography. Dislocations and elemental clustering were confirmed along which Al atoms tend to segregate. The presence of local compositional heterogeneities (dislocations and small clusters) and impurities is related to the variation of local alloy stoichiometry of the BAIN films. The roughness and interface abruptness of BA1N/A1N were investigated, and a few nm of B and Al composition gradient in BAIN adjacent to the interface was observed. The nanoscale compositional analysis reported here will be crucial for developing BAIN films with a high B content and larger thickness for future high power electronics and optical applications.