机译:N极GaN / ALN谐振隧道二极管
School of Electrical and Computer Engineering Cornell University Ithaca New York 14853 USA;
School of Electrical and Computer Engineering Cornell University Ithaca New York 14853 USA;
Department of Materials Science and Engineering Cornell University Ithaca New York 14853 USA;
School of Electrical and Computer Engineering Cornell University Ithaca New York 14853 USA Department of Materials Science and Engineering Cornell University Ithaca New York 14853 USA Kavli Institute for Nanoscale Science Cornell University Ithaca New York 14853 USA;
School of Electrical and Computer Engineering Cornell University Ithaca New York 14853 USA Department of Materials Science and Engineering Cornell University Ithaca New York 14853 USA Kavli Institute for Nanoscale Science Cornell University Ithaca New York 14853 USA;
机译:在独立式GaN上生长的ALN / GAN共振隧道二极管中的双向负差异抗性
机译:GaN / AlN共振隧穿二极管中的431 kA / cm〜2峰值隧穿电流密度
机译:高性能非易失性记忆GaN / ALN谐振隧道二极管的生长和表征
机译:GaN / ALN谐振隧道二极管偏振效应的仿真
机译:基于AL的ALGAN / ALN的双屏障共振隧道二极管
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:N极GaN / ALN谐振隧道二极管