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Charge transport mechanism in La:HfO_2

机译:LA:HFO_2的电荷运输机制

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摘要

Currently, it is generally accepted that the charge transport in dielectrics is limited by the Coulomb trap ionization in a strong electric field (Frenkel effect). In the present work, the charge transport mechanism in La:HfO_2 was experimentally studied, and four theoretical conductivity models-the Frenkel effect of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and Nasyrov-Gritsenko phonon-assisted tunneling between traps-were quantitatively analyzed. It was shown that the charge transport mechanism in La: HfO_2 is qualitatively described by the Frenkel effect, but the Frenkel effect predicts an abnormally low trap concentration value and a large high-frequency dielectric constant value, which is not consistent with the experiment. The charge transport in La:HfO_2 is quantitatively described by the model of phonon-assisted tunneling between neighboring traps.
机译:目前,通常接受电介质中的电荷传输受强电场(Frenkel效果)中的库仑捕集电离限制。在目前的工作中,LA:HFO_2的电荷运输机制是通过实验研究的,四种理论电导率模型 - 库仑陷阱电离,Holdraph-Adachi模型的弗雷克利效应,重叠的库仑势,Makram-ebeid和MultiPonon隔离陷阱的Lannoo模型离子化,并定量分析疏水阀之间的Nasyrov-Gricsenko辅助隧道辅助隧道。结果表明,LA:HFO_2的电荷传输机制由Frenkel效应定性地描述,但Frenkel效果预测了异常低的陷阱浓度值和大的高频介电常数值,这与实验不一致。 LA:HFO_2的电荷传输由相邻陷阱之间的声子辅助隧道模型定量描述。

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  • 来源
    《Applied Physics Letters》 |2020年第14期|142901.1-142901.4|共4页
  • 作者单位

    Rzhanov Institute of Semiconductor Physics SB RAS 13 Lavrentiev ave. 630 090 Novosibirsk Russia Novosibirsk State University 2 Pirogov str. 630090 Novosibirsk Russia Novosibirsk State Technical University 20 Marx ave. 630073 Novosibirsk Russia;

    Rzhanov Institute of Semiconductor Physics SB RAS 13 Lavrentiev ave. 630 090 Novosibirsk Russia Novosibirsk State University 2 Pirogov str. 630090 Novosibirsk Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 22:18:03

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