机译:in_xga_(1-x)n(x <0.1)的设备质量模板,缺陷密度可与GaN相当
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Department of Electrical and Computer Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA National Science Foundation Alexandria Virginia 22314 USA;
Department of Electrical and Computer Engineering North Carolina State University Raleigh North Carolina 27695 USA;
机译:在低缺陷密度独立式GaN衬底上制造的m平面In_xGa_(1-x)N / GaN多量子阱激光二极管晶片中的各向异性光学增益
机译:使用单能正电子束探测的GaN模板上生长的In_xGa_(1-x)N中的空位类型缺陷
机译:p型In_xga_(1-x)n半k模板(0.02
机译:高质量和低缺陷密度的半极性和非极性GaN模板的开发
机译:透射电子显微镜探索GaN的电子器件的物理缺陷和降解机制
机译:HVPE在新型纳米多孔模板上生长的高质量自分离GaN晶体
机译:通过GaN模板的原位SiNx预处理改善了InGaN / GaN量子的晶体质量和光学性能
机译:在独立式GaN模板上通过mOCVD生长GaN和In(x)Ga(1-x)N薄膜的微结构