Realizing high thermoelectric performance in p-type Si_(1-x-y)Ce_xSn_y thin films at ambient temperature by Sn modulation doping

摘要

In this study, we report a power factor (PF) value as high as 1950 μW m~(-1) K~(-2) for B-ion implanted thermoelectric Si_(1-x-y)Ge_xSn_y ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si_(1-x-y)Ge_xSn_y film. It was found that using metallic Sn as nanoparticles and Si_(1-x-y)Ge_xSn_y as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si_(1-x-y)Ge_xSn_y alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.