机译:充电密度波1T-TAS_2设备中的高频电流振荡:重新探测“窄带噪声”概念
Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center Department of Electrical and Computer Engineering University of California Riverside California 92521 USA Intel Corporation Hillsboro Oregon USA;
Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center Department of Electrical and Computer Engineering University of California Riverside California 92521 USA Center for Terahertz Research and Applications (CENTERA) Institute of High-Pressure Physics Polish Academy of Sciences Warsaw 01-142 Poland;
Laboratory for Terascale and Terahertz Electronics (LATTE) Department of Electrical and Computer Engineering University of California Riverside California 92521 USA Intel Corporation Hillsboro Oregon USA;
Laboratory for Terascale and Terahertz Electronics (LATTE) Department of Electrical and Computer Engineering University of California Riverside California 92521 USA;
Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center Department of Electrical and Computer Engineering University of California Riverside California 92521 USA;
机译:垂直准2D 1T-TaS_2器件中电荷密度波相变的低频噪声光谱
机译:1T-Tas_2薄膜装置中热驱动电荷密度波过渡的证据:GHz开关速度的前景
机译:高频,高电平窄带噪声对低频信号的掩盖
机译:消除低噪声汽车风隧道中的高频窄带噪声分量
机译:使用CMOS-MEMSRF电路无源的频率可重构窄带低噪声放大器,用于多频带接收器。
机译:高频高电平窄带噪声对低频信号的掩盖
机译:高频,高电平窄噪声带对低频信号的屏蔽a
机译:窄带最大增益微波放大器。窄带低噪声微波放大器