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Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides

机译:近红外光学性质和拟议的过渡金属二硫化的相变效性

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摘要

The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum optoelectronics; the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here, we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2, and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. We find that the presence of native oxide layers (measured by transmission electron microscopy) significantly modifies the observed optical constants and need to be modeled to extract actual optical constants. We support our measurements with density functional theory calculations and further predict large refractive index contrast between different phases. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e., displacive, order-order) switching. (C) 2019 Author(s).
机译:光子集成电路的开发将受益于可以强烈控制近红外(NIR)光的更广泛选择的材料。过渡金属二甲硅藻(TMDS)已广泛探讨可见光谱光电子;这些层状材料的鼻内特性已经较少研究。光学常数的测量是最重要的步骤,以限定在NIR光子学中使用的TMD。这里,我们通过光谱椭圆形测量在可见态范围内通过光谱椭圆形测量硫化物TMDS(MOS2,TIS2和ZRS2的散装晶体)的复杂光学常数。我们发现天然氧化物层(通过透射电子显微镜测量)的存在显着改变观察到的光学常数,并且需要建模以提取实际的光学常数。我们支持利用密度函数理论计算的测量,并进一步预测不同阶段之间的大折射率对比。我们进一步提出,通过设计竞争晶体结构之间的相位边界的合金来实现马氏体(即,位移,秩序)切换的合金,我们进一步提出了TMDS可以用作光子相变材料。 (c)2019年作者。

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  • 来源
    《Applied Physics Letters》 |2019年第16期|161902.1-161902.5|共5页
  • 作者单位

    MIT Dept Mat Sci & Engn Cambridge MA 02139 USA;

    MIT Dept Mat Sci & Engn Cambridge MA 02139 USA;

    Semilab Semicond Phys Lab Co Ltd H-1117 Budapest Hungary;

    Semilab Semicond Phys Lab Co Ltd H-1117 Budapest Hungary;

    Xi An Jiao Tong Univ State Key Lab Mech Behav Mat Ctr Adv Mat Performance Nanoscale Xian 710049 Peoples R China;

    MIT Dept Nucl Sci & Engn 77 Massachusetts Ave Cambridge MA 02139 USA;

    Harvard Univ Ctr Nanoscale Syst Cambridge MA 02138 USA;

    MIT Dept Mat Sci & Engn Cambridge MA 02139 USA|MIT Dept Nucl Sci & Engn 77 Massachusetts Ave Cambridge MA 02139 USA;

    MIT Dept Mat Sci & Engn Cambridge MA 02139 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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