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Raman spectra and dimensional effect on the charge density wave transition in CdTe_3

机译:拉曼光谱和尺寸对CDTE_3中电荷密度波过渡的尺寸效应

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摘要

The studies of the dimensional effect on the charge density wave (CDW) transition have attracted a lot of attention since the rise of 2D materials. In this paper, we synthesize high-quality single-crystal GdTe3, a member of the layered rare-earth metal tritelluride family with CDW transitions, and systematically study the temperature-dependent Raman spectra of bulk and few-layer GdTe3. Combining with first-principle calculations, the CDW and phonon Raman peaks are distinguished and characterized. We demonstrate that the CDW order can be enhanced in few-layer GdTe3, and the CDW transition temperature increases from 377 K to 431 K as the thickness reduces from the bulk to 10 nm. We speculate that this enhancement of the CDW order in the GdTe3 thin layer is likely due to the chemical pressure release. Our studies demonstrate that the dimensionality provides a valuable tuning parameter for manipulating the CDW properties of GdTe3.
机译:自2D材料升高以来,对电荷密度波(CDW)过渡的尺寸效应的研究引起了很多关注。在本文中,我们合成了高质量的单晶GDTE3,具有CDW过渡的层状稀土金属三晶体系列的成员,并系统地研究了散装和少层GDTE3的温度依赖性拉曼光谱。结合第一原理计算,CDW和声子拉曼峰的区别和特征。我们证明CDW顺序可以在几层GDTE3中增强,并且CDW过渡温度从377k增加到431 k,因为厚度从大容量降低到10nm。我们推测,在GDTE3薄层中的CDW顺序的这种增强可能是由于化学压力释放的原因。我们的研究表明,维度提供了用于操纵GDTE3的CDW属性的有价值的调谐参数。

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  • 来源
    《Applied Physics Letters》 |2019年第15期|151905.1-151905.5|共5页
  • 作者单位

    Shenzhen Univ Inst Adv Study Shenzhen 518060 Peoples R China|Shenzhen Univ Coll Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China|Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Shenzhen Univ Inst Adv Study Shenzhen 518060 Peoples R China;

    Shenzhen Univ Inst Adv Study Shenzhen 518060 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Shenzhen Univ Inst Adv Study Shenzhen 518060 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China|Shenzhen Key Lab Quantum Sci & Engn Shenzhen 518055 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 22:17:49

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