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Ultrafast magnetization switching in nanoscale magnetic dots

机译:纳米级磁点中的超快磁化切换

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摘要

Ultrafast magnetization switching at picosecond and sub-picosecond time scales has tremendous technological potential but still poses numerous questions regarding the underlying quantum mechanical phenomena, including the roles of and interactions between the electrons, spins, and phonons (lattice). At the nanometer-scale dimensions relevant for modern applications, these phenomena become increasingly more pronounced. Until now, helicity-independent all-optical switching (HI-AOS) has been largely limited to amorphous Gd-Fe-Co alloys, for which scaling was challenging due to their relatively low anisotropies. In this work, we demonstrate HI-AOS in amorphous GdCo and scale it to nanometer dimensions while still maintaining uniform out-of-plane magnetization. Single shot HI-AOS is demonstrated in these patterned samples down to a minimum optically detectable magnetic dot size of 200nm. The ultrafast switching behavior was also confirmed using time-resolved magneto-optic Kerr effect measurements and found to settle to its opposite magnetization state at faster rates for smaller dot diameters, passing a threshold of 75% magnetization reversal within approximately 2 ps for a 200nm dot compared to approximately 40 ps for a 15m pattern. The size dependence of the ultrafast switching is explained in terms of the electron-phonon and spin-lattice interactions.
机译:超快磁化切换在皮秒和亚皮秒钟时间尺度上具有巨大的技术潜力,但仍然对潜在的量子力学现象造成了许多问题,包括电子,旋转和声子元(格子)之间的角色和相互作用。在与现代应用相关的纳米尺度尺寸,这些现象变得越来越明显。到目前为止,独立于独立的全光切换(Hi-AOS)已经大大限制为无定形的GD-Fe-Co合金,因为它们具有相对较低的各向异性,缩放是挑战的。在这项工作中,我们在非晶的GDCO中展示了Hi-AOS,并将其缩放到纳米尺寸,同时仍保持均匀的平面外磁化。在这些图案化样品中证明单次拍摄Hi-AOS降至最小光学检测的磁点尺寸为200nm。还使用时间分辨的磁光克尔效应测量来确认超快切换行为,并以更快的速率沉降到其相反的磁化状态,以更快地进行较小的点直径,在200nm点的约2 ps内通过75%磁化反转的阈值与15M模式相比约40 ps。以电子 - 声子和旋转晶格相互作用来解释超快切换的尺寸依赖性。

著录项

  • 来源
    《Applied Physics Letters》 |2019年第23期|232407.1-232407.5|共5页
  • 作者单位

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Phys Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Phys Berkeley CA 94720 USA|Univ Calif Berkeley Dept Mat Sci & Engn Berkeley CA 94720 USA;

    Univ Calif Berkeley Dept Elect Engn & Comp Sci Berkeley CA 94720 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 22:17:46

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