Low temperature device creation in Si via fast Li electromigration

摘要

Micrometer-sized homojunction structures can be formed by local application of strong electric fields (～10~6 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.