GaInP-AlGaInP band offsets determined from hydrostatic pressure measurements

摘要

Low-temperature (1.8 K) photoluminescence spectra of a Ga_(0.52)In_(0.48)P-(Al_(0.58)Ga_(0.42))_(0.52)In_(0.48)P multiple quantum well have been measured as a function of hydrostatic pressure from 0 to 5.0 GPa. The extrapolation to zero pressure of the energy of the indirect k-and-real-space barrier X to well Γ transition allows the direct determination of the valence band offset for this heterojunction system. A value of ΔE_v = (0.35 ± 0.05)ΔE_g is found, in good agreement with values previously determined from the theoretical modeling of quantum well transition energies.