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首页> 外文期刊>Applied Physics Letters >Voltage offsets in (Pb,La)(Zr,Ti)O_3 thin films
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Voltage offsets in (Pb,La)(Zr,Ti)O_3 thin films

机译:(Pb,La)(Zr,Ti)O_3薄膜中的电压偏移

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摘要

Cooling (Pb,La)(Zr,Ti)O_3 films from their pulsed laser deposition temperature in a reducing ambient yields a voltage offset in the polarization—voltage characteristics. Reversing the as-processed polarization at 120℃ nearly removes the offset. By reversing the polarization at room temperature and either heating the film at zero voltage or illuminating the film with UV light, the offset can be partially changed. All changes are recoverable using the same processes with opposite polarity polarization. This behavior is explained by a process-induced accumulation of oxygen vacancies at one interface, oxygen vacancy defect-dipole complexes throughout the film, and trapping of free electrons at the interface of positive polarization. Voltage offset and shift effects are not observed in films cooled in 1 atm of oxygen
机译:在降低的环境中从脉冲激光沉积温度冷却(Pb,La)(Zr,Ti)O_3薄膜会产生极化电压特性的电压偏移。在120℃逆转处理后的极化几乎可以消除偏移。通过在室温下反转极化并以零电压加热胶片或用紫外线照射胶片,可以部分改变偏移量。使用具有相反极性极化的相同过程可以恢复所有更改。这种现象可以通过过程诱导的一个界面处的氧空位积累,整个膜中的氧空位缺陷-偶极复合物以及自由电子在正极化界面处的捕获来解释。在1个大气压的氧气中冷却的薄膜中未观察到电压偏移和移位效应

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