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机译:(Pb,La)(Zr,Ti)O_3薄膜中的电压偏移
Sandia National Laboratories, Albuquerque, New Mexico 87185-0338;
机译:多层PbZr_(0.52)Ti_(0.48)O_3 / Pb(Mg_(1/3)Ta_(2/3))_(0.7)Ti_(0.3)O_3 / PbZr_(0.52)Ti_(0.48)O_3的铁电和导电行为电影
机译:高度(100)的(Pb_(1-x)La_x)Ti_(1-x / 4)O_3 / Pb(Zr_(0.20)Ti_(0.80))O_3 /(Pb_(1-x)La_x)Ti_(1 -x / 4)O_3射频磁控溅射多层薄膜
机译:多层Pb_(1.1)(Zr_(0.3)Ti_(0.7))O_3 / PbTiO_3和Pb_(1.1)(Zr_(0.3)Ti_(0.7))O_3薄膜的热电和瞬态电流特性
机译:PB的有效方向控制(Zr_(0.4)Ti_(0.6))O_3使用新型Ti / Pb的薄膜(Zr_(0.4)Ti_(0.6))O_3播种层
机译:压电瘤应用Pb(Zr0.3Ti0.7)O3薄膜对缩放效应对缩放效应的影响
机译:通过脉冲激光沉积制备具有可调光学性能的超均匀Pb0.865La0.09(Zr0.65Ti0.35)O3薄膜
机译:带La₀.Sr₀.₃MnO₃电极的外延Pb(Zr₀.₅2Ti₀.₄₈)O₃薄膜电容器中界面氧损失控制的电压偏移
机译:a-sITE-aND /或B-sITE-mODIFIED pBZRTIO3材料和(pB,sR,Ca,Ba,mG)(ZR,TI,NB,Ta)O3薄膜,具有铁电随机存取存储器和高性能薄膜微处理器的实用性