Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

摘要

Optical second harmonic generation (SHG) has been measured for plasma-deposited thin films of hydrogenated amorphous silicon (a-Si:H) at different polarization states for pump photon energies between 1.0 and 1.7 eV. Distinct resonance peaks are observed in this energy range and it is shown that the SH signal originates from an isotropic contribution at both the film-surface and substrate-interface region. The possibility that the SH signal originates from surface and interface dangling bond states of a-Si:H is discussed.