Off-state luminescence in metal-oxide-semiconductor field-effect transistors and its use as on-chip voltage probe

摘要

Luminescence of deep submicron metal-oxide-semiconductor field-effect transistors in the off state has been detected and characterized. It exponentially depends on voltages applied to the device and behaves similarly to its off-state leakage current. Time-resolved measurements of this luminescence allow extraction of on-chip voltages in complementary metal-oxide semiconductor integrated circuits. We propose and demonstrate the application of this technique to various signal integrity issues, such as characterization of crosstalk and power supply noise. (C) 2004 American Institute of Physics.