Tunnel magnetoresistance in GaMnAs: Going beyond julliere formula

摘要

The relation between tunnel magnetoresistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using the Landauer approach. The materials are described in the 6 band k.p model which includes spin-orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of spin polarization and barrier thickness. As a result of the stong spin-orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula. (C) 2004 American Institute of Physics.