High-current-density thin-film silicon diodes grown at low temperature

摘要

High-performance thin-film silicon n-i-p diodes are fabricated at temperatures below 160 degreesC using hot-wire chemical vapor deposition. The 0.01 mm(2) diodes have a forward current-density of near 1000 A/cm(2) and a rectification ratio over 10(7) at +/-2 V. Use of microcrystalline silicon i and n layers results in higher current-density diodes than with amorphous silicon, primarily by lowering a barrier to carrier injection. A 30 nm intrinsic Si buffer layer between the i and p layers is needed to reduce the reverse leakage current. Minimizing diode area increases forward current density by reducing the voltage drop across the external series resistances. (C) 2004 American Institute of Physics.