Electronic structure and spin polarization of MnGaP

摘要

We present ab initio pseudopotential-density-functional calculations for the electronic structure of the dilute magnetic semiconductor MnxGa1-xP, with a realistic x=0.063, in its ordered ferromagnetic phase. We find that it possesses a spin-polarized valence band that could support ideal spin-polarized hole transport. We further find spin-polarized features in the conduction band that could support ideal spin-polarized transport of minority electrons. As such, it emerges as a silicon-lattice-matched candidate material for spintronics applications. (C) 2004 American Institute of Physics.