Nickel silicidation on n and p-type junctions at 300℃

摘要

The electrical and materials properties of ～20 nm nickel silicide films, formed at 300℃, on n~(+)/p and p~(+) junctions are investigated. The sheet resistance of the silicide on p~(+) junctions is found to be more than twice as high as that of the silicide on n~(+)/p junctions. Cross section transmission electron microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron energy spectroscopy reveal that a pure Ni_(2)Si layer forms on n~(+)/p junctions while a thicker Ni_(2)Si/NiSi double layer (～60% Ni_(2)Si) forms on p~(+) junctions. But the electrical differences are found to correlate only with differences in grain size and dopant concentration in the silicide.