Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

摘要

To simultaneously obtain information on both the electrical properties and the origin of defects, we have developed synchrotron-radiation deep level transient spectroscopy (SR-DLTS) and applied it to characterization of a metal/insulator Si structures. We have confirmed that SR-DLTS can provide element selective information of defects with by using the x-ray absorption edge for each element. In the Al/AlN/Si heterostructure, we detected two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively. We found that HT1 consists of continuous levels just above the valence band and is related to Si atoms at the AlN/Si interface, whereas HT2 is a discrete level in the AlN film and related to both N and Al.