Mature InAs quantum dots on the GaAs(114)A surface

摘要

InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A, and {2 5 11}A facets, and a steep part composed of rather variable combinations of {110}, (111)A, {1 1 1}B, and {2 5 11} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001).