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GaInP_(2) overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition

机译:金属有机化学气相沉积GaInP_(2)胶体InP纳米晶体的过度生长和钝化

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We have used metalorganic chemical vapor deposition to deposit thin GaInP_(2) passivating films on both isolated and close-packed arrays of colloidal InP/GaInP_(2) core-shell nanocrystals. Conformal GaInP_(2) layers of 10-20 nm were grown on the nanocrystals after organic capping molecule removal by a thermal annealing treatment. We show that the InP nanocrystals retain their crystallinity, shape and luminescence efficiency after being exposed to growth temperatures of 600℃. The GaInP_(2) nanocrystal composite showed strong photoluminescences indicating effective passivation of surface states. In close-packed nanocrystal arrays, the emission band is redshifted compared to films of isolated nanocrystals indicating electron coupling between dots embedded in GaInP_(2).
机译:我们已使用金属有机化学气相沉积法在胶体InP / GaInP_(2)核-壳纳米晶体的隔离阵列和密排阵列上沉积GaInP_(2)钝化薄膜。通过热退火处理去除有机封端分子后,在纳米晶体上生长10-20 nm的保形GaInP_(2)层。我们表明,InP纳米晶体在暴露于600℃的生长温度后仍保持其结晶度,形状和发光效率。 GaInP_(2)纳米晶体复合材料显示出强光致发光,表明表面态有效钝化。在密堆积的纳米晶体阵列中,与孤立的纳米晶体薄膜相比,发射带发生了红移,表明嵌入在GaInP_(2)中的点之间存在电子耦合。

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