InAs/InAsP composite channels for antimonide-based field-effect transistors

摘要

We report the growth and transport characteristics of stepped InAs/InAs_(1-x)P_(x) quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs_(1-x)P_(x) grown at 430℃ substrate temperature (nominal x=0.2), a high 22 500 cm~(2)/V s electron mobility was observed, while 7100 cm~(2)/V s mobility was observed in a single strained InAs_(1-x)P_(x) quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device.