Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition

摘要

We have studied silicon nitride thin films deposited by hot-wire chemical vapor deposition as a function of the substrate temperature and hydrogen dilution. We found that adding H_2 to the process significantly enhances silicon nitride film deposition. High-quality films can be grown at low substrate temperatures ( < 350 ℃). At optimized conditions, a 500-A-thick silicon nitride film gives a nearly 100% surface coverage on a 100 nm scale object. H dilution dramatically increases the NH_2 radicals in the process and leads to conformal films.