Low-temperature (～250℃) route to lateral growth of ZnO nanowires

摘要

Zinc oxide nanowires were obtained through a vapor transport route at temperatures as low as around 250℃. The diameters of the nanowires are ～40 nm and their lengths reach up to a few microns. The high-resolution transmission electron microscopy showed that ZnO nanowires are of hexagonal wurtzite structures with the [1120] growth direction. Raman spectrum reveals that the ZnO nanowires are of high-quality crystal and have an oxygen deficiency. The energy dispersive x-ray spectroscopy result verifies that the nanowires contain a small amount of Bi besides Zn and O. The investigation of the growth mechanism suggests that BiI_3 plays a key role on the fabrication of ZnO nanowires around 250℃.