Epitaxial Heusler alloy Co_2FeSi/GaAs(001) hybrid structures

摘要

We found that Co_2FeSi layers on GaAs(001) grown by molecular-beam epitaxy with high crystal and interface perfection as well as smooth surfaces can be obtained in the low-growth-temperature regime. The layers are thermally robust up to 250℃. They have long-range order and crystallize in the Heusler-type L2_1 structure. The easy axis of magnetization is along the [110] direction caused by a dominating uniaxial in-plane magnetic anisotropy component which has an easy axis different from that of the magnetocrystalline anisotropy component.