Fabrication of strained silicon on insulator by strain transfer process

摘要

The fabrication of ultrathin strained silicon layer directly on insulator is demonstrated. 50 nm strained silicon on insulator layers were fabricated by a method which includes four steps: Epitaxial growth of strained SiGe on ultrathin silicon on insulator (SOI) substrates, ion implantation, postannealing process, and etch-back process. Strain of the layer was observed by Raman spectroscopy. 0.72% tensile strain was maintained in the strained silicon layer even after removing the SiGe film. The strained layer was the result of strain equalization and transfer process between the SiGe film and top silicon layer.