X-ray absorption near-edge fine structure study of AlInN semiconductors

摘要

We have carried out the x-ray absorption near-edge fine structure (XANES) measurements of AlInN at Al K edge and the self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the Al K-edge XANES spectra of AlInN are the fingerprints of their composition. The theoretical results could give a reasonable reproduction of the experimental spectral structures. This type of combined use of the experimental XANES and the theoretical calculations must be a powerful tool for systematic and qualitative analysis of the structural and electronic structures of nitride semiconductors.