Strained silicon thin-film transistors fabricated on glass

摘要

Strained-Si thin-film transistors were fabricated on glass substrate by direct transfer of a 35 nm strained Si film onto glass. The strained Si films were originally grown on a relaxed SiGe layer on Si substrate. The tensile strain for the strained Si on glass (SSOG) was found to be 0.80% ±0.02%. The effective electron mobility of the fabricated NMOS TFTs is 820 cm~2/V s. These devices show low interface charge densities at the bonding interface and at the gate oxide interface, as confirmed by the low subthreshold swing of 77 mV/dec for the 0.5 μm SSOG device.