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Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors
Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors
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机译:应变硅晶体管的制造方法及应变硅CMOS晶体管
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摘要
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate contains a gate structure thereon; performing an etching process to form two recesses corresponding to the gate structure within the semiconductor substrate; performing an oxygen flush on the semiconductor substrate; performing a cleaning process on the semiconductor substrate; and performing a selective epitaxial growth (SEG) to form an epitaxial layer in each recess for forming a source/drain region.
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