机译:具有锗/应变硅异质结的隧道场效应晶体管,用于低功耗应用
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;
Molecular beam epitaxy; Heterojunction; High dielectric function materials; High-dielectric constant; Tunnel field effect transistor;
机译:具有低功耗和高性能应用的源漏工程锗隧穿场效应晶体管的器件物理和设计
机译:应变硅/应变锗II型交错异质结的隧穿场效应晶体管设计
机译:用于超低功率应用的锗源双光晕双介质三重材料围绕栅极隧道场效应晶体管的亚阈值性能分析
机译:用于低功率混合信号应用的平面隧道耦合场效应晶体管
机译:用于低功耗逻辑应用的砷化锑锑化物异质结隧道晶体管
机译:一种适用于低功率应用的新型锗环绕源栅极全能隧穿场效应晶体管
机译:用于低功耗应用的极短通道分级Si / SiGe异质结隧道场效应晶体管的设计优化