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Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy

机译:压电响应力显微镜研究铌酸锂单晶的畴生长动力学

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The kinetics of sidewise domain growth in an inhomogeneous electric field has been investigated in stoichiometric LiNbO_3 single crystals by measuring the lateral domain size as a function of the voltage pulse magnitude and duration using piezoresponse force microscopy. The domain size increases linearly with the voltage magnitude suggesting that the domain size is kinetically limited in a wide range of pulse magnitudes and durations. In spite of that, the written domains exhibit strong retention behavior. It is suggested that the switching behavior can be described by the universal scaling curve. Domain kinetics can be described as an activation process by calculating the field distribution using the charged sphere model under the assumption of an exponential field dependence of the wall velocity. The activation energy is found to be a function of the external field.
机译:通过使用压电响应力显微镜测量作为电压脉冲幅度和持续时间的函数的横向畴尺寸,已在化学计量的LiNbO_3单晶中研究了非均匀电场中横向畴的生长动力学。畴尺寸随电压幅度线性增加,这表明在较大的脉冲幅度和持续时间范围内,畴尺寸在动力学上受到限制。尽管如此,书面域仍表现出强大的保留行为。建议用通用比例曲线来描述开关行为。在壁速度的指数场相关性假设下,通过使用带电球体模型计算场分布,可以将域动力学描述为激活过程。发现活化能是外场的函数。

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