首页> 外文期刊>Applied Physics Letters >Microstructure and enhanced in-plane ferroelectricity of Ba_(0.7)Sr_(0.3)TiO_3 thin films grown on MgAl_2O_4 (001) single-crystal substrate
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Microstructure and enhanced in-plane ferroelectricity of Ba_(0.7)Sr_(0.3)TiO_3 thin films grown on MgAl_2O_4 (001) single-crystal substrate

机译:MgAl_2O_4(001)单晶衬底上生长的Ba_(0.7)Sr_(0.3)TiO_3薄膜的微结构和增强的面内铁电

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摘要

The microstructure and in-plane dielectric and ferroelectric properties of highly oriented Ba_(0.7)Sr_(0.3)TiO_3 (BST) thin film grown on MgAl_2O_4 (001) single-crystal substrate through pulsed laser deposition were investigated. X-ray diffraction measurements indicated that BST had a distorted lattice with a tetragonality a/c= 1.012. The cross-sectional observation under transmission electron microscope revealed that, while most of BST grains grew epitaxially on MgAl_2O_4, the film also contained a noticeable amount of misoriented grains and dislocations. The electrical measurements indicated that the film had a shifted Curie temperature (T_C=78℃) and an enhanced in-plane ferroelectricity (remnant polarization P_r=7.1 μC/cm~2) when compared with BST ceramic (T_C≈33℃ and P_r≈0).
机译:研究了通过脉冲激光沉积法在MgAl_2O_4(001)单晶衬底上生长的高取向Ba_(0.7)Sr_(0.3)TiO_3(BST)薄膜的微观结构以及面内介电和铁电性能。 X射线衍射测量表明,BST具有畸变的晶格,其四方性a / c = 1.012。透射电镜下的横截面观察表明,虽然大多数BST晶粒在MgAl_2O_4上外延生长,但薄膜中也含有大量的取向错误的晶粒和位错。电学测量表明,与BST陶瓷(T_C≈33℃和P_r≈)相比,薄膜的居里温度发生了变化(T_C = 78℃),面内铁电增强(剩余极化P_r = 7.1μC/ cm〜2)。 0)。

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