Site selective studies of Er~(3+) emission centers in Er-implanted 6H-SiC

摘要

In this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 μm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er~(3+) emitting centers which dominate luminescence at 1.54 μm has been presented. The Stark spritting of the ~4I_(9/2) excited states and ~4I_(15/2) ground states for all three centers were determined. All centers reveal low local symmetry, probably due to complexes with impurities and defects.