Annealing Studies of Photoluminescence Spectra from Multiple Er~(3+) Centers in Er-Implanted GaN

KIM S.; RHEE S.J.; LI X.; COLEMAN J.J.; BISHOP S.G.

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Annealing Studies of Photoluminescence Spectra from Multiple Er~(3+) Centers in Er-Implanted GaN

机译：Er注入GaN中多个Er〜（3+）中心的光致发光光谱的退火研究

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来源
《Journal of Electronic Materials》 |1999年第3期|共9页
作者
KIM S.; RHEE S.J.; LI X.; COLEMAN J.J.; BISHOP S.G.;
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原文格式 PDF
正文语种 eng
中图分类材料;
关键词
Activation; Er; GaN; aimplantation; photoluminescence(PL);

机译：活化;Er;GaN;注入;光致发光（PL）;

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专利

1. Annealing Studies of Photoluminescence Spectra from Multiple Er~(3+) Centers in Er-Implanted GaN [J] . KIM S., RHEE S.J., LI X., Journal of Electronic Materials . 1999,第3期

机译：Er注入GaN中多个Er〜（3+）中心的光致发光光谱的退火研究
2. Excitation Mechanisms of Multiple Er↑(3+) Sites in Er-Implanted GaN [J] . S. SIM, S.J. RHEE, X. LI Journal of Electronic Materials . 1998,第1a6期

机译：Er注入GaN中多个Er↑（3+）位的激发机理
3. Influence of postimplantation annealing on photoluminescence in Er-implanted AIGaN/GaN superlattices [J] . N. A. Sobolev, A. M. Emelianov, E. I. Shek, Bulletin of the Russian Academy of Sciences. Physics . 2003,第2期

机译：注入后退火对掺Er的AIGaN / GaN超晶格中光致发光的影响
4. Comparison of Er~(3+) Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er and Er-implanted GaN [C] . Andrea M. Mitofsky, George C. Papen, Stephen G. Bishop, MRS Meeting . 2001

机译：ER〜（3+）光致发光和光致发光激发光谱对原位掺杂GaN的比较：ER和ER植入GaN
5. Optical spectroscopy, crystal field analysis, upconversion and energy transfer studies of Er(3+) doped yttrium vanadate single crystals. [D] . Kabro, Pierre. 1997

机译：掺Er（3+）钒酸钇钇单晶的光谱，晶体场分析，上转换和能量转移研究。
6. Photoluminescence quantum efficiency of Er optical centers in GaN epilayers [O] . V. X. Ho, T. V. Dao, H. X. Jiang, -1

机译：GaN外延层中Er光学中心的光致发光量子效率
7. Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN [O] . Song SF, Chen WD, Zhang CG, 2004

机译：掺Er和O + O共注入GaN的拉曼散射和光致发光研究

Annealing Studies of Photoluminescence Spectra from Multiple Er~(3+) Centers in Er-Implanted GaN

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