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Ferromagnetism in Mn doped half-Heusler NiTiSn: Theory and experiment

机译:Mn掺杂的半Heusler NiTiSn中的铁磁性:理论与实验

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摘要

In this letter, the authors show by ab initio density functional calculations and experiments that Mn doped semiconducting half-Heusler compound NiTiSn can exhibit room-temperature ferromagnetism. Curie temperatures were calculated by Monte Carlo simulations using calculated Heisenberg exchange parameters in an ab initio Green's function approach. The calculated temperature exceeds room temperature for a Mn doping concentration of 22%. Magnetic measurements confirm the presence of possible intrinsic ferromagnetism in these systems. This brings up the possibility of considering this system as a potential candidate for use in room-temperature spintronic devices.
机译:在这封信中,作者从头算密度函数计算和实验表明,锰掺杂的半导体半霍斯勒化合物NiTiSn可以表现出室温铁磁性。居里温度通过从头开始格林函数方法中使用计算出的海森堡交换参数,通过蒙特卡洛模拟进行计算。对于22%的Mn掺杂浓度,计算的温度超过室温。磁性测量结果证实了这些系统中可能存在固有的铁磁性。这带来了将该系统视为室温自旋电子器件中潜在候选者的可能性。

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