Ferroelectric properties of Pt/PbTiO_3/PbZr_(0.3)Ti_(0.7)O_3/PbTiO_3/Pt integrated capacitors etched in noncrystalline phase

摘要

Uniformly patterned Pt/PbTiO_3/PbZr_(0.3)Ti_(0.7)O_3/PbTiO_3/Pt capacitor arrays were etched in noncrystalline phase. The ferroelectric layer was well crystallized and contains uniform grains. The capacitors exhibit well-saturated hysteresis loop and excellent fatigue properties in terms of larger saturation polarization P_(max) of 53.2 μC/cm~2 at an applied voltage of 12 V, higher remnant polarization P_r of 30.5 μC/cm~2 for a coercive field of 58 kV/cm, remnant polarization of about 81.2% at 10~(10) switching cycles, and a low leakage, current density of 10~(-8) A/cm~2 at an applied voltage of 3 V. The etching effects on the properties of capacitor were reduced to minimal values, confirmed by scanning electron microscope, energy-dispersive x-ray microanalysis, and piezoresponse force microscopy results. The reliable electric properties and fine profile of the patterns indicate that the capacitors are suitable for ferroelectric random access memories and other integrated ferroelectric devices.