Hall electron mobility in diamond

摘要

The low field Hall mobility of electron in diamond was investigated from room temperature to 873 K, both experimentally and theoretically. The acoustic deformation potential for electron scattering is determined by fitting of theoretical calculations to experimental data for high quality {111} homoepitaxial phosphorus-doped diamond films. A good agreement is obtained over a large doping range. A discrepancy for the electron mobilities measured under optical excitation is discussed. The maximum Hall mobility achievable at thermodynamical equilibrium in low compensated n-type diamond is shown to be close to 1000 cm~2/V s at room temperature.