Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterestructures

摘要

Electrical spin injection from ferromagnetic δ-MnGa into an (Al,Ga)As p-i-n light-emitting diode (LED) is demonstrated. The δ-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence, without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.