The authors describe an acoustic-phonon technique for dynamic microelectromechanical device characterization. Proof of concept experiments using electrostatic resonators reveal a linear phonon to displacement relationship, with detection gain factors up to 25.2 mV/μm attained for packaged devices. Q values of 21 600 and 465 obtained at operating pressures of 6.0 X 10~(-6) and 760 Torr, respectively, conform to theoretical estimates. Duffing behavior for nonlinear resonator operation was also characterized as a third order response. As acoustic phonons are well detected on any external location for packaged devices, destructive depackaging for die probing is unnecessary, allowing noninvasive testing and high measurement throughput to be attained.
展开▼
机译:作者描述了用于动态微机电装置表征的声子声子技术。使用静电谐振器的概念验证实验揭示了线性声子与位移的关系,对于封装器件,检测增益因子高达25.2 mV /μm。在6.0 X 10〜(-6)和760 Torr的工作压力下分别获得的21 600和465的Q值符合理论估计。非线性谐振器操作的达芬行为也被表征为三阶响应。由于在封装设备的任何外部位置都可以很好地检测到声子,因此无需进行破坏性的拆装以进行裸片探测,从而可以实现无创测试和高测量通量。
展开▼